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Intel announces milestone in large-scale Quantum Qubit Chip Production
Photo Credit To Intel

Intel announces milestone in large-scale Quantum Qubit Chip Production

Intel announces milestone in large-scale Quantum Qubit Chip Production

The Intel Labs and Components Research organizations have demonstrated the industry’s highest reported yield and uniformity to date of silicon spin qubit devices developed at Intel’s transistor research and development facility, Gordon Moore Park at Ronler Acres in Hillsboro, Oregon. This achievement represents a major milestone for scaling and working towards fabricating quantum chips on Intel’s transistor manufacturing processes.

The research was conducted using Intel’s second-generation silicon spin test chip. Through testing the devices using the Intel cryoprober, a quantum dot testing device that operates at cryogenic temperatures (1.7 Kelvin or -271.45 degrees Celsius), the team isolated 12 quantum dots and four sensors. This result represents the industry’s largest silicon electron spin device with a single electron in each location across an entire 300-millimetre silicon wafer.

Intel quantum engineers Florian Luthi (from left), Aditi Nethwewala, Stephanie Bojarski and Otto Zietz stand in front of a van-sized tool called a cryoprober, which sits in a lab at Gordon Moore Park at Ronler Acres in Oregon. In the cryoprober’s chamber, 300-millimeter silicon wafers are tested at 1.7 kelvins, just above absolute zero. Bojarski holds one of those 300-millimeter spin qubit wafers. (Credit: Intel Corporation)
Intel quantum engineers Florian Luthi (from left), Aditi Nethwewala, Stephanie Bojarski and Otto Zietz stand in front of a van-sized tool called a cryoprober, which sits in a lab at Gordon Moore Park at Ronler Acres in Oregon. In the cryoprober’s chamber, 300-millimeter silicon wafers are tested at 1.7 kelvins, just above absolute zero. Bojarski holds one of those 300-millimeter spin qubit wafers. (Credit: Intel Corporation)

Today’s silicon spin qubits are typically presented on one device, whereas Intel’s research demonstrates success across an entire wafer. Fabricated using extreme ultraviolet (EUV) lithography, the chips show remarkable uniformity, with a 95% yield rate across the wafer. The use of the cryoprober together with robust software automation enabled more than 900 single quantum dots and more than 400 double dots at the last electron, which can be characterized at one degree above absolute zero in less than 24 hours.

Increased yield and uniformity in devices characterized at low temperatures over previous Intel test chips allow Intel to use statistical process control to identify areas of the fabrication process to optimize. This accelerates learning and represents a crucial step toward scaling to the thousands or potentially millions of qubits required for a commercial quantum computer.

Intel's director of Quantum Hardware, James S. Clarke, holds a fully processed 300 millimeter silicon spin qubit wafer. (Credit: Intel Corporation)
Intel’s director of Quantum Hardware, James S. Clarke, holds a fully processed 300-millimetre silicon spin qubit wafer. (Credit: Intel Corporation)

Additionally, the cross-wafer yield enabled Intel to automate the collection of data across the wafer at the single electron regime, which enabled the largest demonstration of single and double quantum dots to date.

This increased yield and uniformity in devices characterized at low temperatures over previous Intel test chips represents a crucial step toward scaling to the thousands or potentially millions of qubits required for a commercial quantum computer.

An image from Intel’s cryoprober during automation shows the quantum qubit devices at 1.6 kelvins, where quantum dots can be formed in all 16 locations (four sensors and 12 qubit locations) and tuned to the last (single) electron without requiring engineer input. These results, enabled by intel fabricated device uniformity and repeatability, were collected across the entire wafer. The system is continually operated to generate the largest set of quantum dot device data reported to date. (Credit: Intel Corporation)
An image from Intel’s cryoprober during automation shows the quantum qubit devices at 1.6 kelvins, where quantum dots can be formed in all 16 locations (four sensors and 12 qubit locations) and tuned to the last (single) electron without requiring engineer input. These results, enabled by intel fabricated device uniformity and repeatability, were collected across the entire wafer. The system is continually operated to generate the largest set of quantum dot device data reported to date. (Credit: Intel Corporation)

“Intel continues to make progress toward manufacturing silicon spin qubits using its own transistor manufacturing technology,” said James Clarke, director of Quantum Hardware at Intel. “The high yield and uniformity achieved show that fabricating quantum chips on Intel’s established transistor process nodes is the sound strategy and is a strong indicator for success as the technologies matures for commercialization.

“In the future, we will continue to improve the quality of these devices and develop larger scale systems, with these steps serving as building blocks to help us advance quickly,” Clarke said.

Intel announces milestone in large-scale Quantum Qubit Chip Production

Post source : Intel

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